Contacts to P-doped GaAs Nanowires by Fabrication of Electrodes using Metals and Graphene
P-type GaAs semiconducting nanowires (NWs) with NW/electrode contacts have been examined by fabricating single NW devices to investigate their electrical properties. Both NWs grown with Au-assisted and Ga-assisted vapor-liquid-solid (VLS) method have been examined, with great emphasis on Ga-assisted...
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| Format: | Others |
| Language: | English |
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Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon
2012
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-18846 |