Characterization of AlGaN HEMT structures
During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the...
| Main Author: | |
|---|---|
| Format: | Others |
| Language: | English |
| Published: |
Linköpings universitet, Institutionen för fysik, kemi och biologi
2007
|
| Subjects: | |
| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9729 |