| Summary: | During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electrical properties. In this work, AlGaN HEMT structures grown on SiC substrates by a hot-wall MOCVD have been characterized for their properties using optical microscopy, scanning electron microscopy, transmission electron microscopy, capacitance/voltage, eddy-current resistivity, and by homebuilt epi-thickness mapping equipment. A high electron mobility of 1700 [cm2/Vs] was achieved in an AlN exclusion-layer HEMT. A similar electron mobility of 1650 [cm2/Vs] was achieved in a combination of a double heterojunction and exclusion-layer structure. The samples had approximately the same electron mobility but with a great difference: the exclusion-layer version gave a sheet carrier density of 1.58*1013 [electrons/cm2] while the combination of double heterojunction and exclusion-layer gave 1.07*1013 [electrons/cm2]. A second 2DEG was observed in most structures, but not all, but was not stable with time. The structures we grew during this work were also simulated using a one-dimensional Poisson-Schrödinger solver and the simulated electron densities were in fairly good agreement with the experimentally obtained. III-nitride materials, the CVD concept, and the onedimensional solver are shortly explained.
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