Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

We report the low-temperature (250 °C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical rectifying characteristic of a p–n junction and the pr...

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Bibliographic Details
Main Authors: Shtepliuk, I, Khranovskyy, Volodymyr, Lashkarev, G, Khomyak, V., Lazorenko, V, Ievtushenko, A, Syväjärvi, Mikael, Jokubavicius, Valdas, Yakimova, Rositsa
Format: Others
Language:English
Published: Linköpings universitet, Halvledarmaterial 2013
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-90901
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Summary:We report the low-temperature (250 °C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical rectifying characteristic of a p–n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.

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