Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
We report the low-temperature (250 °C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical rectifying characteristic of a p–n junction and the pr...
| Main Authors: | , , , , , , , , |
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| Format: | Others |
| Language: | English |
| Published: |
Linköpings universitet, Halvledarmaterial
2013
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-90901 |