Electron paramagnetic resonance study of defects in SiC
Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. The electronic properties of a...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Institutionen för fysik, kemi och biologi
2010
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-56586 http://nbn-resolving.de/urn:isbn:978-91-7393-380-3 |