A computational study on indium nitride ALD precursors and surface chemical mechanism

A computational study on indium nitride ALD precursors and surface chemical mechanism

Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be grown using Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD), but the availability of precursors and knowledge of the underlaying chemical reactions is limited. In this study the ga...

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Bibliographic Details
Main Author:	Rönnby, Karl
Format:	Others
Language:	English
Published:	Linköpings universitet, Kemi 2018
Subjects:	Computational Chemistry Chemical Vapour Deposition Atomic Layer Deposition Indium nitride gas phase decomposition surface mechanism Physical Chemistry Fysikalisk kemi
Online Access:	http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-144426

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