Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods
The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover,...
Main Author: | Serban, Alexandra |
---|---|
Format: | Others |
Language: | English |
Published: |
Linköpings universitet, Tunnfilmsfysik
2017
|
Subjects: | |
Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-141595 http://nbn-resolving.de/urn:isbn:9789176854396 |
Similar Items
-
Multifunctional transition metal diboride thin films grown by magnetron sputtering with metal-ion irradiation
by: Bakhit, Babak
Published: (2020) -
Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors
by: Tran, Dat
Published: (2021) -
Hot-wall MOCVD of N-polar group-III nitride materials
by: Zhang, Hengfang
Published: (2021) -
Deposition of Al-doped ZnO films by high power impulse magnetron sputtering
by: Mickan, Martin
Published: (2017) -
Helium in CERMET fuel - binding energies and diffusion
by: Runevall, Odd
Published: (2009)