Electron Paramagnetic Resonance Studies of Point Defects in AlGaN and SiC
Point defects in semiconductor materials are known to have important influence on the performance of electronic devices. For defect control, knowledge on the model of defects and their properties is required. Information on defects, such as the symmetry and the localization of spins, is essential fo...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117882 http://nbn-resolving.de/urn:isbn:978-91-7519-064-8 (print) |