Investigation of deep levels in bulk GaN
The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobe...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2014
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-112262 http://nbn-resolving.de/urn:isbn:978-91-7519-169-0 (print) |