Excitonic Effects and Energy Upconversion in Bulk and Nanostructured ZnO
Zinc Oxide (ZnO), a II-VI wurtzite semiconductor, has been drawing enormous research interest for decades as an electronic material for numerous applications. It has a wide and direct band gap of 3.37eV and a large exciton binding energy of 60 meV that leads to intense free exciton (FX) emission at...
Main Author: | Chen, Shula |
---|---|
Format: | Doctoral Thesis |
Language: | English |
Published: |
Linköpings universitet, Funktionella elektroniska material
2014
|
Subjects: | |
Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-102594 http://nbn-resolving.de/urn:isbn:978-91-7519-464-6 |
Similar Items
-
Luminescence Properties of ZnO Nanostructures and Their Implementation as White Light Emitting Diodes (LEDs)
by: Alvi, Naveed ul Hassan
Published: (2011) -
Nanostructured materials for gas sensing applications
by: Buchholt, Kristina
Published: (2011) -
DNA-mediated self-assembly of nanostructures : theory and experiments
by: Högberg, Björn
Published: (2007) -
Plasmon-Exciton Coupling Dynamics in Metal-ZnO Nanostructures
by: Lawrie, Benjamin J.
Published: (2011) -
Spin Properties in InAs/GaAs Quantum Dot based Nanostructures
by: Beyer, Jan
Published: (2012)