Electro-thermal simulations and measurements of silicon carbide power transistors
The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and te...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och informationsteknik, IMIT
2004
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86 |