Radiation effects on wide bandgap semiconductor devices
Gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) are used in a wide variety of areas, such as 5G, automotive, aeronautics/astronautics and sensing elds ranging from chemical, mechanical, biological to optical applications. Owing superior material properties, the GaN based HEMTs...
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| Format: | Others |
| Language: | English |
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KTH, Tillämpad fysik
2020
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-283320 |