Processing and characterization of self-aligned Ni/Al and Co ohmic contacts to 4H-SiC
New self-aligned silicide processes for the realization of Ni/Al and Co contacts to silicon carbide (4H-SiC) are presented and contacts are characterized using the transfer length method (TLM). Since cobalt silicide formation on 4H-SiC has not been investigated before, interface reaction between Co...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för elektroteknik och datavetenskap (EECS)
2018
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-235539 |