High Temperature Bipolar SiC Power Integrated Circuits
In the recent decade, integrated electronics in wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole d...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Integrerade komponenter och kretsar
2017
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-201618 http://nbn-resolving.de/urn:isbn:978-91-7729-262-3 |