Fabrication, Characterization and Simulation of Graphene Field Effect Transistors operating at Microwave Frequencies
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approaching fast as predicted by the Moore’s Law, and the technological advancements as well as human needs in many ways pushing for faster devices, graphene has emerged as a powerful alternative solution. Th...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för informations- och kommunikationsteknik (ICT)
2013
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-129401 |