Growth and Characterization of Polycrystalline Indium Phosphide on Silicon
III-V thin film solar cells attract large interest among the scientific community as a highly efficient solar energy source. High cost of the III-V materials, however, is the fundamental limitation for using these materials as a household energy source. Integrating these materials on low cost and la...
Main Author: | Xiaoyi, Wang |
---|---|
Format: | Others |
Language: | English |
Published: |
KTH, Skolan för informations- och kommunikationsteknik (ICT)
2013
|
Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-128231 |
Similar Items
-
Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration
by: Olsson, Fredrik
Published: (2008) -
Characterization of Silicon and Indium Phosphide MOS Structures with Titanium Oxide as Gate Oxides
by: Jung-Jie Huang, et al.
Published: (2005) -
MOSFETs on indium phosphide
by: Al-Refaie, S. N. A. R.
Published: (1982) -
Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode
by: Hiroki Hamada
Published: (2017-07-01) -
Fabrication and characterization of indium phosphide/indium tin oxide solar cells
by: Naseem, S.
Published: (1985)