Antimony implanted strained Si for nMOSFET applications
Incorporation of implanted antimony (Sb) in strained-silicon (s-Si) formed on relaxed-SiGe virtual substrates (10 and 30% Ge) has been studied. The implantation doses were 5×1013- 5×1014 cm-2 with an energy of 20 keV. The activation of dopant was performed by an rapid thermal annealing (RTA) treatme...
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| Format: | Others |
| Language: | English |
| Published: |
2009
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-10986 |