Experimental Comparison of Different Gate-Driver Configurations for Parallel-Connection of Normally-ON SiC JFETs

• Main Authors: Peftitsis, Dimosthenis, Lim, Jang-Kwon, Rabkowski, Jacek, Tolstoy, Georg, Nee, Hans-Peter
• Format: Others
• Language: English
• Published: KTH, Elektrisk energiomvandling 2012
• Subjects: JFETs; Junctions; Logic gates; Resistors; Silicon carbide; Switches; Transient analysis
• Online Access: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-104800; http://nbn-resolving.de/urn:isbn:978-1-4577-2085-7

Due to the low current ratings of the currently available silicon carbide (SiC) switches they cannot be employed in high-power converters. Thus, it is necessary to parallel-connect several switches in order to reach higher current ratings. This paper presents an investigation of parallel-connected normally-on SiC junction field effect transistors. There are four crucial parameters affecting the effectiveness of the parallel-connected switches. However, the pinch-off voltage and the reverse breakdown voltage of the gates seem to be the most important parameters which affect the switching performance of the devices. In particular, the spread in these two parameters might affect the stable off-state operation of the switches. The switching performance and the switching losses of a pair of parallel-connected devices having different reverse breakdown voltages of the gates is investigated by employing three different gate-driver configurations. It is experimentally shown that using a single gate-driver circuit the switching performance of the parallel-connected devices is almost identical, while the total switching losses are lower compared to the other two configurations. === <p>QC 20121116</p>