Photoluminescence and AFM characterization of silicon nanocrystals prepared by low-temperature plasma enhanced chemical vapour depositon and annealing.
When studying quantum dots one of the most important properties is the size of the band gap, and thus also their physical dimensions. We investigated these properties for silicon quantum dots created by means of plasma-enhanced chemical vapour deposition and annealing. To determine the band gap size...
| Main Authors: | , |
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| Format: | Others |
| Language: | English |
| Published: |
KTH, Fysik
2012
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-103001 |