Cross-Sectional Scanning Tunneling Microscopy Studies of In 1-xGax Sb/InAs Quantum Dots

Cross-Sectional Scanning Tunneling Microscopy Studies of In 1-xGax Sb/InAs Quantum Dots

This thesis focuses on the characterization of In 0,4 Ga 0,6 Sb/InAs and InSb/InAs quantum dots using Cross-Sectional Scanning Tunneling Microscopy (X-STM). Quantum dots (QDs) are small and spatially confined semiconductor nanostructures with a size-dependent band gap. This property makes them very...

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Bibliographic Details
Main Authors:	Reuterskiöld Hedlund, Carl, Ernerheim Jokumsen, Christopher
Format:	Others
Language:	English
Published:	KTH, Skolan för informations- och kommunikationsteknik (ICT) 2012
Online Access:	http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-101481

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