A simplified hot-electron subpopulation hydrodynamic model for impact ionization in silicon
A simplified hydrodynamic (HD) model has been developed for the study of impact ionization (II) phenomena in silicon semiconductor devices. The model is based on the average energy of the hot electron subpopulation (HES) which is believed to be more relevant to the II than the average energy of the...
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| Language: | ENG |
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ScholarWorks@UMass Amherst
1997
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| Online Access: | https://scholarworks.umass.edu/dissertations/AAI9809375 |