Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method

A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is developed. The model is based on the Shockley-Ramo theorem, which allows the instantaneous current at the terminals of a device to be calculated as a function of time. Once the instantaneous current is fou...

Full description

Bibliographic Details
Main Author: Adams, John Goldthwaite
Language:ENG
Published: ScholarWorks@UMass Amherst 1991
Subjects:
Online Access:https://scholarworks.umass.edu/dissertations/AAI9120843
id ndltd-UMASS-oai-scholarworks.umass.edu-dissertations-2636
record_format oai_dc
spelling ndltd-UMASS-oai-scholarworks.umass.edu-dissertations-26362020-12-02T14:28:05Z Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method Adams, John Goldthwaite A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is developed. The model is based on the Shockley-Ramo theorem, which allows the instantaneous current at the terminals of a device to be calculated as a function of time. Once the instantaneous current is found, the current autocorrelation function and spectral density can be found. Results using this method for the case of homogeneous samples are compared with experiment. Both Nyquist and hot electron noise are demonstrated. A boundary condition suitable for use in devices of submicron dimensions is developed, and applied to resistors from 0.5 to 1.5 $\mu$m in length. A method for conducting a full-device Monte Carlo simulation of a Schottky Barrier diode is developed. The noise is simulated in two diodes, one with a 0.12 and the other with a 1.0 $\mu$m epilayer, and except when shot noise dominates the results are shown to compare quite favorably with experiment. A second method, a particle crossing method, is shown to be useful for calculating shot noise. 1991-01-01T08:00:00Z text https://scholarworks.umass.edu/dissertations/AAI9120843 Doctoral Dissertations Available from Proquest ENG ScholarWorks@UMass Amherst Electrical engineering
collection NDLTD
language ENG
sources NDLTD
topic Electrical engineering
spellingShingle Electrical engineering
Adams, John Goldthwaite
Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method
description A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is developed. The model is based on the Shockley-Ramo theorem, which allows the instantaneous current at the terminals of a device to be calculated as a function of time. Once the instantaneous current is found, the current autocorrelation function and spectral density can be found. Results using this method for the case of homogeneous samples are compared with experiment. Both Nyquist and hot electron noise are demonstrated. A boundary condition suitable for use in devices of submicron dimensions is developed, and applied to resistors from 0.5 to 1.5 $\mu$m in length. A method for conducting a full-device Monte Carlo simulation of a Schottky Barrier diode is developed. The noise is simulated in two diodes, one with a 0.12 and the other with a 1.0 $\mu$m epilayer, and except when shot noise dominates the results are shown to compare quite favorably with experiment. A second method, a particle crossing method, is shown to be useful for calculating shot noise.
author Adams, John Goldthwaite
author_facet Adams, John Goldthwaite
author_sort Adams, John Goldthwaite
title Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method
title_short Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method
title_full Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method
title_fullStr Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method
title_full_unstemmed Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method
title_sort numerical modeling of noise in gallium arsenide semiconductor devices using the monte carlo method
publisher ScholarWorks@UMass Amherst
publishDate 1991
url https://scholarworks.umass.edu/dissertations/AAI9120843
work_keys_str_mv AT adamsjohngoldthwaite numericalmodelingofnoiseingalliumarsenidesemiconductordevicesusingthemontecarlomethod
_version_ 1719363662090600448