Epitaxial growth of rare-earth trifluorides on III-V semiconductors

Epitaxial growths of rare-earth trifluorides on III-V semiconductors have been investigated. Synchrotron photoemission spectroscopy showed a complete coverage of III-V substrates by LaF₃ and ErF₃ films and interfacial chemical reactions at the interface. In the LaF₃ films on GaAs(lll) substrates,...

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Bibliographic Details
Main Author: Ritchie, Sayuri
Format: Others
Language:English
Published: 2009
Online Access:http://hdl.handle.net/2429/9586

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