Epitaxial growth of rare-earth trifluorides on III-V semiconductors
Epitaxial growths of rare-earth trifluorides on III-V semiconductors have been investigated. Synchrotron photoemission spectroscopy showed a complete coverage of III-V substrates by LaF₃ and ErF₃ films and interfacial chemical reactions at the interface. In the LaF₃ films on GaAs(lll) substrates,...
Main Author: | Ritchie, Sayuri |
---|---|
Format: | Others |
Language: | English |
Published: |
2009
|
Online Access: | http://hdl.handle.net/2429/9586 |
Similar Items
-
Epitaxial growth of rare-earth trifluorides on III-V semiconductors
by: Ritchie, Sayuri
Published: (2009) -
Molecular beam epitaxial growth of rare-earth compounds for semimetal/semiconductor heterostructure optical devices
by: Crook, Adam Michael
Published: (2012) -
Modeling and optimization of molecular beam epitaxy for III-V compound semiconductor growth
by: Lee, Kyeongkyun
Published: (2007) -
Epitaxial growth of nitride-related Ⅲ-Ⅴ compound semiconductors on the Si Substrates
by: A. P. Chiu, et al.
Published: (2007) -
SELECTIVE AREA EPITAXIAL GROWTH OF III-V SEMICONDUCTOR STRUCTURES FOR OPTOELECTRONIC APPLICATIONS
by: FRANCISCO JUAN RACEDO NIEBLES
Published: (2000)