Electrical properties of evaporated silicon films
The Hall coefficient and conductivity of silicon films vacuum deposited on 0° and 60° sapphire at 850°C to 1050°C were measured from 100°K to 550°K. Films made from 0.094 Ω-cm p type and 1 Ω-cm n type silicon sources were prepared by electron bombardment heating of the source in a vacuum of 5 x 10⁻⁷...
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| Language: | English |
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University of British Columbia
2011
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| Online Access: | http://hdl.handle.net/2429/37938 |