Evaporated silicon thin-film transistors
The method of fabrication, the theory and the properties of evaporated silicon thin-film transistors are discussed. The device consists of a p-type silicon film (0.5 to 2µ thick) on a sapphire substrate, with aluminum source-drain electrodes evaporated onto the silicon and followed by a silicon oxi...
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| Language: | English |
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University of British Columbia
2011
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| Online Access: | http://hdl.handle.net/2429/37213 |