| Summary: | A coupled-circuit element representation of an IGBT module from Westcode
Semiconductors Inc. has been developed, simulated, and experimentally
confirmed at TRJUMF in Vancouver, BC. This model can be simulated in
PSpice to predict the distribution of current within the IGBT module under
high di/dt switching conditions. The goal of the simulations is to determine
if the module is an acceptable candidate for implementation in a thyratron
replacement switch for high-power pulse-power applications.
The model developed has been shown to agree well with frequency domain
measurements, and also with finite element method (FEM) simulations
and boundary element method (BEM) simulations of the device. === Applied Science, Faculty of === Electrical and Computer Engineering, Department of === Graduate
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