An investigation of defects in gallium arsenide using the DLTS technique
A well-known technique—Deep level Transient Spectroscopy (DLTS)—was used for investigating deep levels in Gallium Arsenide (GaAs) semiconductor material. Eight deep levels, among them the most important deep level EL2, were found in Liquid-Encapsulated Czochralski (LEC) grown semi-insulating GaAs su...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/28061 |