Gallium arsenide materials and device fabrications
The purpose of this work was to study certain aspects of device fabrication and material properties of ion implanted MESFETs in semi-insulating LEC GaAs. The fabrication technology and materials properties of GaAs are presently the chief limitations in the way of application of GaAs ion-implanted de...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/26332 |