Surface evolution during gallium arsenide homoepitaxy with molecular beam epitaxy
GaAs grown with MBE is the basis for many useful optoelectric devices. Measurements are presented of the smoothing of patterned and randomly roughened GaAs surfaces during homoepitaxy over a large range of Ga flux, substrate temperatures, arsenic fluxes, and Bi surfactant. The bulk of these measurem...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/17455 |