| Summary: | 碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 108 === In response to the needs of mankind, communication technology is gradually moving toward the era of 5G, and the emerging materials that are currently considered to meet this demand are mainly silicon carbide and gallium nitride compound materials, and GaN materials are more economical. The gallium nitride material has a faster electron mobility and a higher breakdown electric field than the silicon material, and has a faster switching speed and a higher forward current than the silicon material during voltage conversion, but in aluminum nitride. The production of the schottky diode on AlGaN / GaN will cause a large reverse leakage current, so it is our research goal.
In this study, a AlGaN / GaN material was used to fabricate the Schottky diode. We used a second anode etch technique to achieve low reverse leakage current and low forward onset voltage. Low power Inductively-Coupled Plasma (ICP) with chlorine gas for dry etching can accurately control the etching rate, achieve nano level etching depth, and effectively improve component characteristics. Finally, a double-layer anode electric field plate is plated to increase the breakdown voltage and to withstand high voltage components.
As a result, a high performance SBD device (Gate Width 1mm, Gate Length 10 µm) with a VT of 0.42V (1 mA/mm), a VF of 1.26 V (100 mA/mm), a leakage current of 12 nA/mm and a breakdown voltage of 1140V (1mA/mm) is successfully manufactured.
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