High Performance AlGaN/GaN-On-Si Lateral Schottky Barrier Diodes with Dual Anode Recess and Double Anode Field Plate
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 108 === In response to the needs of mankind, communication technology is gradually moving toward the era of 5G, and the emerging materials that are currently considered to meet this demand are mainly silicon carbide and gallium nitride compound materials, and Ga...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2h84ed |