Modeling of Read Operation Induced Conductance Change in Resistive Switching Devices for Neuromorphic Applications
碩士 === 國立交通大學 === 電子研究所 === 108 === In this thesis, we characterize the negative voltage read induced conductance change in a hafnium oxide RRAM synapse. An analytical model is developed to describe the conductance evolution with the number of read cycles. The proposed model includes the impact of r...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/f2z2yg |