| Summary: | 碩士 === 國立暨南國際大學 === 應用化學系 === 108 === The solution process has attracted much attention in recent years due to its low cost, simple method, and low energy consumption. In this study, we present a bar-coating method for air stable, n-channel organic field-effect transistors (OFETs) based on BAIMTT-C2C6, BAIMTT-C6C10 and BDPM-But.
We have successfully improved the quality of BAIMTT-C2C6 and BAIMTT-C6C10 thin films with improved coating machine. Top-contact bottom-gate OFETs were fabricated on PTS-modified SiO2 substrates, and we were successfully measured electrical characteristic. At the same time, also we studied the material BDPM-But to discuss the difference between solution process and vacuum evaporation.
In terms of devices performance, the carrier mobility of BAIMTT-C2C6 and BAIMTT-C6C10 in air environment obtained 9.81 × 10-5 cm2 V-1 s-1 and 8.69 × 10-4 cm2 V-1 s-1, respectively. The BDPM-But exhibits the best performance, the carrier mobility obtained 3.87 × 10-2 cm2 V-1 s-1, which is only 3 to 4 times worse than the vacuum evaporation. In conjunction with the surface morphology and molecular stacking of XRD and AFM spectrum analysis, the differences in performance of the three materials were investigated. From the above results, it is known that the bar-coating method has the potential to develop into one of the advanced solution process methods.
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