Study on the combination of two- step passivation layer of tin monoxide transistors
碩士 === 元智大學 === 電機工程學系丙組 === 107 === In recent years, oxide thin-film transistors have been widely studied, and oxide semiconductors have the potential for stable mobility, on/off ratio and low-temperature film forming ability, and become a popular choice for the next generation of transparent soft...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9ktfxn |