| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系 === 107 === This thesis is on metal-semiconductor-metal MAPbBr3 perovskite crystal photodetector. Perovskite crystals are produced by constant temperature growth. To explore the effect of different crystal growth temperature on crystal structure, we analyzed the crystal structure, crystal uniformity, and defects by XRD and PL. We found the best temperature for crystal growth and subsequently fabricated the perovskite crystal into photodetector. The current-to-voltage characteristic curve（IV curve）, optical responsivity, and carrier mobility of the light detector were measured. The electrode of the photodetector is an interdigitated structure in which MAPbBr3 perovskite crystal semiconductor materials are used as a light absorbing layer. On the electrode, C60 is used as an electron transport layer, resulting in a light response exhibited at an incident light wavelength of 400 nm. When the photodetector was biased to 15V, 16V, 17V, 18V, 19V and 20V, the optimal optical responsivity is 13.13 A/W, 14.97 A/W, 17.13 A/W, 19.98 A/W, 22.48 A/W and 24.50 A/W; the carrier mobility was 14.4 cm2V-1s-1.
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