Preparation of MA0.5FA0.5Pb0.8Sn0.2I3 lead-tin mixed perovskite thin film and its application in inverted solar cells

• Main Authors: JHOU, YANG-CHENG, 周楊程
• Other Authors: CHEN, LUNG-CHIEN
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/tyq477

碩士 === 國立臺北科技大學 === 光電工程系 === 107 === Lead-tin mixed perovskite is generally considered to be an effective method to broaden the absorption wavelength of perovskite thin film. However, the preparation of lead-tin mixed perovskite is a major challenge because of the multivalent state of tin and the stability in the atmosphere. This study attempts to replace the organic cations and metal elements of perovskites with a relatively thermal stable formamidinium (FA) and a more environmentally friended tin element. MA0.5FA0.5Pb0.8Sn0.2I3 lead-tin mixed perovskite thin film was prepared by one-step spin coating method, and the film formation rate during synthesis was changed by modifying the concentration of dimethyl sulfoxide(DMSO) in the lead-tin mixed perovskite precursor, then applied in invertrd solar cells. The device structure of the inverted solar cell is : Glass/ITO/PEDOT:PSS/MA0.5FA0.5Pb0.8Sn0.2I3/C60/Ag. The hole transport layer (PEDOT:PSS) and the active layer (MA0.5FA0.5Pb0.8Sn0.2I3) are prepared by spin coating method. The electron transport layer (C60) and electrode (Ag) are prepared by vacuum thermal evaporation. Finally, the field emission scanning electron microscope (FESEM) was used to measure the surface morphology of the thin film and the cross section of the device. Measurement of thin film crystal phase by X-Ray diffractometer (XRD). UV-VIS spectrometer measures thin film absorption and transmission. In terms of device, the solar simulator is used to measure device parameters such as J-V curve, open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and photoelectric conversion efficiency (Efficiency).