| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與工程系材料科學與綠色能源工程碩士班 === 107 === The experiment used non-vacuum processes to prepare Si doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. The first step of the experimental process, according to different proportions of copper-selenium, indium-selenium and tellurium-selenium three compound powder then add pure silicon. After the CIGS slurry is prepared by the ball milling method, the slurry is coated on the substrate by spin coating to form a precursor layer film,the slurry Cu/(In+Ga) atomic percentage is 0.8, 1.0, The precursor layer is placed in an infrared rapid heating furnace (RTA) for rapid annealing at temperatures of 300 ° C, 400 ° C, and 500 ° C, respectively, and the temperature is maintained for 10 minutes to make the film produce chalcopyrite structure.
In this experiment, the film with a Molar fraction of 0.36 has a chalcopyrite structure at 300 ° C and 400 ° C, and the characteristic peak (112) of the chalcopyrite structure at 400 ° C is half-height and wide. The grain size is larger, which promotes the improvement of crystallinity after sintering of the film. In this experiment, the film with the Molar fraction of 0.36 has secondary phase CuSe. The temperature of the secondary phase CuSe characteristic peak increases with the increase of the annealing annealing heat treatment temperature. Strong. In this experiment, a Si content of 0.2 g molar fraction was 0.36 and a heat treatment temperature of 400 ° C was the best Cu (InGa) Se2 film.
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