| Summary: | 碩士 === 國立虎尾科技大學 === 光電工程系光電與材料科技碩士班 === 107 === In this study, the PEDOT:PSS film was used as the hole injection layer in the organic light-emitting diode, and its element structure was: ITO/PEDOT:PSS/NPB/Alq3/BPhen/Lif/Al. PEDOT:PSS was added to different concentrations of MoO3 aqueous solution and WO3 aqueous solution as additives, and PEDOT:PSS was modified.
When the PEDOT:PSS film is doped with 20wt% MoO3, the modified PEDOT:PSS film is added to the organic light-emitting diode to improve the photoelectric characteristics of the organic light-emitting diode, and the current efficiency is up to 3.20 cd/A. The PEDOT:PSS-doped component of MoO3 is irradiated to the surface 400 S by UV Ozone to promote the chemical adsorption of MoO3 in the PEDOT:PSS doping, and the Mo5+ in the MoO3 film is increased to Mo6+ to improve the device characteristics and the current during irradiation. Both efficiency and brightness are optimized, with current efficiency up to 3.27 cd/A.RoO is sprayed between ITO PEDOT:PSS to prevent PEDOT:PSS from directly contacting ITO to deteriorate the surface of the substrate to improve the characteristics of the device. The current efficiency is up to 3.5 cd/A.
|
|---|
