Research on the Dissipation Ability of Electrostatic Protection for IC Sealing and Testing Process

• Main Authors: SHIH, TIEN-JEN, 石天人
• Other Authors: CHEN, WEN-RAY
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/4294vb

碩士 === 國立虎尾科技大學 === 光電工程系光電與材料科技碩士班 === 107 === Electrostatic damage (ESD) is an abnormal phenomenon which happens frequently in IC package process. Also, it is difficult to find out. Most of the ESD phenomena are found through a series of testing in the later process. Even some of them was due to the low yield, then the investigation was carried out afterward. However, it will cause serious disasters to the company, whether in human or material resources, and there are still some serious problems. It can damage goodwill and affect orders, so electrostatic protection is very important. In this experiment, the dissipation ability of electrostatic charge was studied mainly on the die-bond machine. Then find the working area with the highest voltage in the machine mechanism, and set up ion neutralizer. Subsequently, for the usual cleaning cycle, for the distance between the ion gun and the wafer surface, and for the flow rate of air inside the ion gun, above three parts of experiment related to the dissipation ability were done. Finally, as a result of this study, we know that the dissipation ability of the discharge needle is obviously declined at the eighth week and this is due to the influence of silica crystallization. When the distance between the ion gun and the wafer surface is 10cm and the air flow rate of the ion gun is 40L/MIN, the dissipation ability of ESD has the best performance. Later, in the maintenance, the experimental results can be used to determine the balance voltage and the standard of the dissipation time. Do a good job for the ESD protection.