Coupling Design for Packaging III-V laser with SOI Photonic Chips using Semiconductor Micro-Mirrors
碩士 === 國立臺灣科技大學 === 電子工程系 === 107 === The integration of active and passive devices has been instrumental in achieving hybrid silicon laser as well as optical interconnects. In this thesis, the integration of active III-V laser and Silicon-On-Insulator Photonic Integrated Circuits through micro-mirr...
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| Format: | Others |
| Language: | en_US |
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2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/j45pya |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 107 === The integration of active and passive devices has been instrumental in achieving hybrid silicon laser as well as optical interconnects. In this thesis, the integration of active III-V laser and Silicon-On-Insulator Photonic Integrated Circuits through micro-mirror has been proposed. The micro-mirror is required to attain the phase matching with the grating coupler on the PIC surface. The light emitted by the III-V laser is input into the concave micro-mirror with alignment conditions such that the light reflected from the micro-mirror can be coupled into the grating coupler. The initial part of the thesis shows the simulation for coupling light using the FDTD wave propagation as well as Ray-tracing models. The FDTD modeling shows the highest coupling efficiency of 64% using an apodized grating coupler. The apodized grating thickness has been designed as 520 nm with an etch depth of 220 nm using the polysilicon overlay technique. The output waveguide thickness has been designed to be the standard 220 nm thickness for single-mode transmission. The Ray Tracing Model has been used to study the free space light propagation and reflection characteristics of the concave mirror. The laser source position has been designed to be 150 μm away from the concave mirror center and 167 μm away from the center of the concave mirror, near the edge of the 200 μm diameter mirror. The coupled power in this ray-tracing model has been computed to be 40.859% when the detector is at a distance of 100μm from the mirror edge.
The thesis also presents the fabrication method of the semiconductor concave micro-mirror which includes the combination of V-groove fabrication and BCB coating followed by gold deposition on the top surface. The V-groove fabrication is achieved through the traditional anisotropic etching method followed by BCB spin coating in the V-grooves. Different BCB spin-coating parameters have been investigated for three different chips to determine the best mirror surface followed by gold deposition to make it a reflecting surface. Towards the end of the thesis, we have characterized this mirror surface using the 650 nm as well as the 1550 nm incident beam. The best incident angle for the detector surface so far has been 10.8 ± 2 degrees with a consistent beam spot size. The beam profiler measurements show that the highest power of the output beam with uniform Gaussian distribution has been achieved with mirror 2. The surface profile measurement for mirror 2 also concludes this result with a uniform curvature of the concave mirror along both sides of the center.
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