| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 107 === It remains a challenge to utilize silane based self-assembled monolayers (SAMs) to site‐selective growth to modify channel part of the top gate bottom contact (TGBC) configuration of organic thin film transistor (OTFT). As we know, if we want to modify the surface between the active layer and the substrate, the silane based SAMs will anchor onto the entire substrate, causing work function modulation of source and drain electrodes. Here we use blocking layer (SAM1) due to good selectivity between glass and ITO electrodes which only passivated on the ITO region, in this study we used SAM1 to avoid the silane group anchored onto ITO electrodes which would cause above problem. We utilize 3-cyanopropyltriethoxysilane (CN-silane) and (3-Aminopropyl)triethoxysilane (NH2-silane) to modified the channel part of patterned substrate. This research shows modified substrates were applied on p-type material, Poly(3-hexylthiophene) (P3HT), ambipolar polymer, diketopyrrolopyrrole (DPP) and oxide semiconductor, IGZO based transistors. Through our study, the performance of OTFT is correlated with the surface dipole moment of the interface which is between the substrate and active layer in the channel region, the electron withdrawing and donating groups in SAMs can improve the performance of the P-type and N-type semiconductor devices, respectively.
|
|---|
