Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers

碩士 === 國立臺灣大學 === 電機工程學研究所 === 107 === In this thesis, we focus on the development of long-wavelength vertical cavity surface-emitting lasers(VCSELs), including epitaxial structure design, process development and DC measurement analysis, especially the fabrication of top bragg reflectors. The conten...

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Main Authors: Chun-Kai Chang, 張鈞凱
Other Authors: Chao-Hsin Wu
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/8b2r42
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spelling ndltd-TW-107NTU054420342019-11-16T05:27:57Z http://ndltd.ncl.edu.tw/handle/8b2r42 Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers 1310奈米長波長垂直共振腔面射型雷射製程開發與分析 Chun-Kai Chang 張鈞凱 碩士 國立臺灣大學 電機工程學研究所 107 In this thesis, we focus on the development of long-wavelength vertical cavity surface-emitting lasers(VCSELs), including epitaxial structure design, process development and DC measurement analysis, especially the fabrication of top bragg reflectors. The content of the paper includes epitaxial structure design, reflectance simulation analysis, InP etching test, development of top DBR, mask design and fabrication process steps and photoelectric DC characteristic measurement. First, we introduce the current optical communication transmission, and discusses the difference between the surface-emitting laser and the edge-emitting laser, as well as the advantages and applications of long- wavelength and short-wavelength lasers. Finally, the idea, design and advantages of the project are proposed. Following, we introduce the epitaxial structure design and simulate its epitaxial properties (reflectivity, electric field distribution), and illustrates the etching characteristics of InP and the development of the upper semiconductor/air mirror, including N-shape mesa etching test, ion implant test and the material embedded etch test. After we get the approach form test, we design every mask form out experiences. And then we introduce the design of the variation in the process - the aperture, how to control depth in etch process. The actual process flow steps are also illustrated, and the DC current measurement is discussed. The results of the light output power and current curves under different confinement apertures are analyzed, and The difference between the upper mirror before and after etching. In this research, we also change the approaches of top DBR. Depositing dielectric as a new mirror and illustrate how to design a dielectric DBR to match the resonant cavity. Actual component process steps are also modified. The output power and current curves at the confined aperture and the results before and after deposition of the dielectric mirror. Final, there is summary of the whole paper and a description of the direction for further improvement in the future. Chao-Hsin Wu Jui-Che Tsai 吳肇欣 蔡睿哲 2019 學位論文 ; thesis 74 zh-TW
collection NDLTD
language zh-TW
format Others
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description 碩士 === 國立臺灣大學 === 電機工程學研究所 === 107 === In this thesis, we focus on the development of long-wavelength vertical cavity surface-emitting lasers(VCSELs), including epitaxial structure design, process development and DC measurement analysis, especially the fabrication of top bragg reflectors. The content of the paper includes epitaxial structure design, reflectance simulation analysis, InP etching test, development of top DBR, mask design and fabrication process steps and photoelectric DC characteristic measurement. First, we introduce the current optical communication transmission, and discusses the difference between the surface-emitting laser and the edge-emitting laser, as well as the advantages and applications of long- wavelength and short-wavelength lasers. Finally, the idea, design and advantages of the project are proposed. Following, we introduce the epitaxial structure design and simulate its epitaxial properties (reflectivity, electric field distribution), and illustrates the etching characteristics of InP and the development of the upper semiconductor/air mirror, including N-shape mesa etching test, ion implant test and the material embedded etch test. After we get the approach form test, we design every mask form out experiences. And then we introduce the design of the variation in the process - the aperture, how to control depth in etch process. The actual process flow steps are also illustrated, and the DC current measurement is discussed. The results of the light output power and current curves under different confinement apertures are analyzed, and The difference between the upper mirror before and after etching. In this research, we also change the approaches of top DBR. Depositing dielectric as a new mirror and illustrate how to design a dielectric DBR to match the resonant cavity. Actual component process steps are also modified. The output power and current curves at the confined aperture and the results before and after deposition of the dielectric mirror. Final, there is summary of the whole paper and a description of the direction for further improvement in the future.
author2 Chao-Hsin Wu
author_facet Chao-Hsin Wu
Chun-Kai Chang
張鈞凱
author Chun-Kai Chang
張鈞凱
spellingShingle Chun-Kai Chang
張鈞凱
Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers
author_sort Chun-Kai Chang
title Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers
title_short Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers
title_full Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers
title_fullStr Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers
title_full_unstemmed Fabrication Development and Analysis of 1310 nm Long-Wavelength Vertical Cavity Surface Emitting Lasers
title_sort fabrication development and analysis of 1310 nm long-wavelength vertical cavity surface emitting lasers
publishDate 2019
url http://ndltd.ncl.edu.tw/handle/8b2r42
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