| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === This thesis is divided into two parts to discuss the Avalanche Photodiode(APD). The front part analyses the electrical properties of the planer-type InP/InGaAs SAGCM (Separate Absorption, Grading, Charge, and Multiplication) APD. The measurement includes current-voltage analysis, capacitance-voltage analysis, and the effect of temperature variation on device. And we also discuss the influence on punch-through voltage and breakdown voltage with different pattern parameters. From the result of current-voltage measurement, when there is no spacing between the guard ring and the active region, the punch-through voltage is the smallest, the breakdown voltage is the biggest, and the dark current before breakdown is larger than others. It is also known form variable temperature current-voltage measurement that the main source of the dark current is generation-recombination current from InGaAs absorption layer, and the higher the temperature, the larger the breakdown voltage.
The latter part is the measurement of Geiger-mode Si-APD operates on Passive Quenching Circuit(PQC). And we measure the real breakdown voltage and APD internal resistance with PQC. At last, we also propose the place where traditional PQC model needs to be modified.
|
|---|
