The Study of Optical Characterization Techniques on Silicon Carbide and Low-dimensional Materials
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 107 === Silicon Carbide (SiC) has been studied for the next generation semiconductor materials due to its wide bandgap, high resistivity, and high conductivity which make it suitable for working under high power, high frequency, and high temperature environments. Be...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vgzm8y |