| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 107 === The silicon waveguide is a basic component for implementing various photonic devices on a silicon-on-insulator (SOI) platform. Due to the high refractive index of silicon, the light can be well confined in the waveguide during propagation, and this allows the cross-sectional dimension of single mode silicon waveguide to be able to reach sub-micron levels. Silicon waveguide can produce high integration density of optoelectronic devices through mature semiconductor fabrication technology nowadays, thus it plays an important role in integrated photonic and electronic circuits. However, using the SOI substrate to fabricate the silicon waveguide results in higher cost, and therefore we intend to use the silicon substrate instead of the SOI substrate to fabricate the silicon waveguide.
In this thesis we fabricate the silicon waveguide on the silicon substrate by photolithography and wet oxidation methods. Wet oxidation method has a faster oxidation rate. By creating a buried oxide layer between the waveguide and the substrate through wet oxidation, the light can be transmitted through the waveguide with good confinement, reducing the energy lost through the substrate during transmission. Fabricating the waveguides directly on the silicon substrate costs lower than the conventional use of the SOI substrate. With the aid of the scanning electron microscope to observe each step in the process, we have successfully fabricated silicon waveguides on silicon substrate.
|
|---|
