Growth mechanism and performance of AlN fabricated by dif-ferent periodic pattern sapphire substrate
碩士 === 國立臺灣大學 === 光電工程學研究所 === 107 === Using a patterned sapphire substrate(PSSs) in the Aluminum nitride thin film can reduce the threading dislocation density and increase the crystal quality, and reduce the defect density. Due to the size of commercial patterned sapphire substrate is micronmeter,...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46pzzn |