Preparation of Graphene by Chemical Vapor Deposition
碩士 === 國立臺南大學 === 電機工程學系碩博士班 === 107 === With the advancement of technology, the human life and technology seems inseparable in the modern life. The technology of semiconductors and electronic components also developed rigorously. The process of semiconductor and electronic components had requested...
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ndltd-TW-107NTNT04420012019-11-28T05:21:58Z http://ndltd.ncl.edu.tw/handle/hz7d8j Preparation of Graphene by Chemical Vapor Deposition 利用化學氣相沉積法製備石墨烯 CAI, QING-YAO 蔡清耀 碩士 國立臺南大學 電機工程學系碩博士班 107 With the advancement of technology, the human life and technology seems inseparable in the modern life. The technology of semiconductors and electronic components also developed rigorously. The process of semiconductor and electronic components had requested to make it smaller and smaller, causing the conventional component reduction technology faces major challenges. Therefore, the direct process of micro-nano structure has become another trend. These structures included carbon nanotubes, nanowires and graphene. Graphene was a popular material and has extra-attracted for its two-dimensional structure and rapid electron drift rate in recent years. The mechanical pull-back method, published in 2004 by the Nobel Laureate in 2010, was used adhesive tape to stick layers of grapheme from HOPG (High Directional Thermal Dissociation Graphite) reversely and occasionally a single-layer grapheme formed. However, the method was difficult and impossible to apply for industrial product. Therefore, the CVD (chemical vapor deposition) was used in this experiment, metal copper foil was used as a catalytic metal to deposit graphene on the surface of the copper foil, and then transfer graphene to the desired substrate. The single-layer graphene has rapidly drift rate for electrons. However, the double-layers or dozens-layers of graphene are more conductive efficiently because it had more free electrons than single-layer graphene. Therefore, the effects of temperature, time, and gas flow rate on the change of graphene structure and number of layer were studied. The quality and structural defects of graphene were analyzed using a Raman spectrometer. In the transfer process, we used a cracking tape as a support layer for graphene and etched the copper foil to transfer it onto a new substrate. The transmittance was detected by a visible light spectrometer and the electronic resistance was measured with a four-point probe. Results showed that the transmittance rate of graphene was 93.7% and the electronic resistance of graphene sheet was 2671.6(ohm /sq). LU,YANG-MING 盧陽明 2018 學位論文 ; thesis 62 zh-TW |
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碩士 === 國立臺南大學 === 電機工程學系碩博士班 === 107 === With the advancement of technology, the human life and technology seems inseparable in the modern life. The technology of semiconductors and electronic components also developed rigorously. The process of semiconductor and electronic components had requested to make it smaller and smaller, causing the conventional component reduction technology faces major challenges. Therefore, the direct process of micro-nano structure has become another trend. These structures included carbon nanotubes, nanowires and graphene. Graphene was a popular material and has extra-attracted for its two-dimensional structure and rapid electron drift rate in recent years.
The mechanical pull-back method, published in 2004 by the Nobel Laureate in 2010, was used adhesive tape to stick layers of grapheme from HOPG (High Directional Thermal Dissociation Graphite) reversely and occasionally a single-layer grapheme formed. However, the method was difficult and impossible to apply for industrial product. Therefore, the CVD (chemical vapor deposition) was used in this experiment, metal copper foil was used as a catalytic metal to deposit graphene on the surface of the copper foil, and then transfer graphene to the desired substrate.
The single-layer graphene has rapidly drift rate for electrons. However, the double-layers or dozens-layers of graphene are more conductive efficiently because it had more free electrons than single-layer graphene. Therefore, the effects of temperature, time, and gas flow rate on the change of graphene structure and number of layer were studied. The quality and structural defects of graphene were analyzed using a Raman spectrometer.
In the transfer process, we used a cracking tape as a support layer for graphene and etched the copper foil to transfer it onto a new substrate. The transmittance was detected by a visible light spectrometer and the electronic resistance was measured with a four-point probe. Results showed that the transmittance rate of graphene was 93.7% and the electronic resistance of graphene sheet was 2671.6(ohm /sq).
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author2 |
LU,YANG-MING |
author_facet |
LU,YANG-MING CAI, QING-YAO 蔡清耀 |
author |
CAI, QING-YAO 蔡清耀 |
spellingShingle |
CAI, QING-YAO 蔡清耀 Preparation of Graphene by Chemical Vapor Deposition |
author_sort |
CAI, QING-YAO |
title |
Preparation of Graphene by Chemical Vapor Deposition |
title_short |
Preparation of Graphene by Chemical Vapor Deposition |
title_full |
Preparation of Graphene by Chemical Vapor Deposition |
title_fullStr |
Preparation of Graphene by Chemical Vapor Deposition |
title_full_unstemmed |
Preparation of Graphene by Chemical Vapor Deposition |
title_sort |
preparation of graphene by chemical vapor deposition |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/hz7d8j |
work_keys_str_mv |
AT caiqingyao preparationofgraphenebychemicalvapordeposition AT càiqīngyào preparationofgraphenebychemicalvapordeposition AT caiqingyao lìyònghuàxuéqìxiāngchénjīfǎzhìbèishímòxī AT càiqīngyào lìyònghuàxuéqìxiāngchénjīfǎzhìbèishímòxī |
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