A Proposed Mechanism of WS2 Formation by Atomic Layer Deposition Using Bis(tert-butylimino)bis(dimethylamino)tungsten and H2S

A Proposed Mechanism of WS2 Formation by Atomic Layer Deposition Using Bis(tert-butylimino)bis(dimethylamino)tungsten and H2S

碩士 === 國立清華大學 === 工程與系統科學系 === 107

Bibliographic Details
Main Authors:	Chen, Yen-Chun, 陳彥君
Other Authors:	Lee, Chih-Hao
Format:	Others
Language:	en_US
Published:	2018
Online Access:	http://ndltd.ncl.edu.tw/handle/wvdprk

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