Improved Operation Characteristics of Charge Trap Flash Memory Devices by Engineering Stacked Trapping Layer
碩士 === 國立清華大學 === 工程與系統科學系 === 107
Main Authors: | Lu, Yu-Chin, 盧育勤 |
---|---|
Other Authors: | ChangLiao, Kuei-Shu |
Format: | Others |
Language: | zh-TW |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/ahj6f9 |
Similar Items
-
Operation Characteristic of Charge-Trapping-type Flash Memory Device with Charge-trapping layer of stacked dielectrics
by: Te-Chiang Liu, et al.
Published: (2008) -
The study of charge trap flash memory device with band engineered trapping layer
by: Tsai, Cheng-Yu, et al.
Published: (2010) -
Effects of Stacked High-K Charge trapping layers on Charge Trapping-type Flash Memory Device
by: Tsai, Tzu-Ting, et al.
Published: (2009) -
Enhanced Operation Characteristics of Charge Trapping Flash Memory Devices with Nitrogen Incorporation and Bandgap Engineering in Charge Trapping Layer
by: 呂承勳
Published: (2013) -
Effects of Stacked High-k Blocking Layer on Charge-Trapping Flash Memory Devices
by: Shiu, Feng-Wen, et al.
Published: (2010)